., o ne. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212) 227-6005 fax: (973) 376-8960 maximum ratings rating drain-source voltage drain-gale voltage drain current gate current total device dissipation @ ta = wc derate above 25"c lead temperature, 1/16" from seated surface for 10 seconds storage channel temperature range operating channel temperature symbol vds vdgi vog2 id 'g1r 'g1f iq2r !g2f pd tl tsta tcnannel value 25 30 30 30 -10 10 -10 10 300 1.71 260 -65 to +176 175 unit vdc vdc madc madc mw mvwc c ?c ?c 3N209 to-72 dual-gate mosfet uhf communications n.channel?depletion electrical characteristics oa - 26'c unless otherwise noted.) characteristic symbol mln ivp unit off characteristics drain-source breakdown voltage tlq - 10 /iadc, vq!s = -4.0 vdc, vgzs = 4.0 vdc) gate 1 ? source forward breakdown voltage (|q1 - 10 madc, vg2s = vds = 0) gate 1 ? source reverse breakdown voltage ?g1 - -10madc,vg2s - vds = 0) gate 2 ? source forward breakdown voltage wgz - 10 madc, vqis - vds - <" gate 2 ? source reverie breakdown voltage ?g2 = - 10 madc, vgis - vds = 0) gate 1 ? terminal forward current (vgis - 6.0 vdc, vq2s - vds = o) gate 1 ? terminal reverse current {vgis - -?-o vdc, vq2s = vds - ) (vgis - -6.0 vdc, vg2g ?. vds - . ta = ikcc) gate 2 ? terminal forward current (vgzs = 8.0 vdc, vgis = vds = 0) gate 2 ? terminal reverse current ivg2s = -b-o vdc, vgis - vds = o. ta - 1bo'c> vibridsx v(br)g1ssf vibriqissr v(br1g2ssf v(br)g2ssr 'g1ssf 'g.issr !g2ssf iq2ssr 25 7.0 -7,0 7.0 -7.0 ? - _ i ? ? ? ? ? ? - ? - ? 22 -22 22 -22 20 -20 -10 20 -20 -10 vdc vdc vdc vdc vdc nadc nadc fiadc nadc nadc ?iadc on characteristics gate 1 ? zero voltage drain current (vqs - 16 vdc, vq,s - 0, vg2s - 4.0 vdc) idss 5.0 ? 30 madc small-signal characteristics forward transfer admittance (vos ? 1b vdc, vg2s . 4.0 vdc, id = 10 madc, f = 1.0 khz) input capacitance (vds - ib vdc, vqjs - 4.0 vdc, id * 5.0 madc, f - 1.0 mhz) reverse transfer capacitance (vds ? 16 vdc, vg2s = 4.0 vdc, id ? 6.0 madc, f - 1.0 mhz) output capacitance 3N209 electrical characteristics (continued) (ta ?-- 26'c unless otherwise noted.) characteristic symbol mln typ max unit functional characteristics noise figure (vds - 16 vdc, vq2s = 4- vde, id - 10 madc, f = 500 mhz) common source power gain (figure 12) (vds = 16 vdc, vq2s = 4- vd<;. id = 10 madc. f = 600 mhz) ?bandwidth (vds - 16 vdc, vq2s = *?<> vdc, in = 10 madc. f = 600 mhz) nf gps bw ? 10 7.0 4.0 13 ? 6.0 20 17 db db mhz figure 1 - mosfet circuit schematic typical scattering parameters 220 figure 2 -bh, input reflection coefficient viruu frequency 330 340 360 0 ip 20 30 m0? figure 3 - s,2, reverse transmission coefficignt variut frequency 30 20 10 0 350 340 330 wft 320 210 200 190 180 170 160 110 2!0 150' 170 1h 190 200 210
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